M5M29FT800VP-80 SPC, SCHALTUNG, FUNKTION
M5M29FT800VP-80 Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| Mitsubishi | TSOP | CMOS 3.3V-only, block erase flash memory |
M5M29FT800VP-80 PDF | Min.°C | Max°C |
- Mitsubishi Electric Semiconductor M5M29FT800FP
8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800FP-10
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800FP-12
- Mitsubishi M5M29FT800FP-80
CMOS 3.3V-only, block erase flash memory - Mitsubishi Electric Semiconductor M5M29FT800RV-10
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800RV-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800RV-80
8,388,608-BIT (1048,576-576-WORD 8-BIT 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800VP
8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800VP-10
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi Electric Semiconductor M5M29FT800VP-12
8,388,608-BIT (1048,576-WORD 8-BIT 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY - Mitsubishi M5M29FT800VP-80
CMOS 3.3V-only, block erase flash memory