K4E160411D-B SPC, SCHALTUNG, FUNKTION
K4E160411D-B Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| Samsung | SOJ | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
K4E160411D-B PDF | Min.°C | Max°C |
- Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.