BF1012 SPC, SCHALTUNG, FUNKTION
BF1012 Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| Siemens Semiconductor Group | Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network |
BF1012 PDF | Min.°C | Max°C |
- Siemens Semiconductor Group BF1005
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network) - Infineon Technologies BF1005R
Silicon N-Channel MOSFET Tetrode - Siemens Semiconductor Group BF1005S
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network) - Infineon Technologies BF1005SR
Silicon N-Channel MOSFET Tetrode - Infineon Technologies BF1005SW
Silicon N-Channel MOSFET Tetrode - Infineon Technologies BF1005W
Silicon N-Channel MOSFET Tetrode - Siemens Semiconductor Group BF1009
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network - Siemens Semiconductor Group BF1009S
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated bias network) - Infineon Technologies BF1009SR
Silicon N-Channel MOSFET Tetrode - BF1009SW
TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R - BF100V
SSR CONTROL MODULE 0-10V - Siemens Semiconductor Group BF1012
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network - Siemens Semiconductor Group BF1012S
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network) - Siemens Semiconductor Group BF1012W
SILICON N-CHANNEL MOSFET TETRODE low-noise, gain-controlled input stages