2SD812Q SPC, SCHALTUNG, FUNKTION
2SD812Q Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB | Min.°C | Max°C |
- Panasonic Semiconductor 2SD803
DIFFUSED JUNCTION MESA - 2SD806
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C) - Panasonic Semiconductor 2SD809
Audio Frequency Power Amplifier,Low Speed Switching - Toshiba 2SD811
(2SDxxx) TRANSISTOR - Inchange 2SD812
Silicon Power Transistor - 2SD812P
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD812Q
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD812R
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - Panasonic Semiconductor 2SD813
EPITAXIAL PLANAR - Panasonic Semiconductor 2SD814
Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification) - Panasonic Semiconductor 2SD814A
Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification) - 2SD814AQ
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814AR
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814AS
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814Q
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346