2SB1110B SPC, SCHALTUNG, FUNKTION
2SB1110B Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 | Min.°C | Max°C |
- Hitachi Semiconductor 2SB1101
FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 - hitachi 2SB11012SB1102
Silicon Triple Diffused - Inchange Semiconductor Company Limited 2SB1102
Silicon Power Transistors - Hitachi Semiconductor 2SB1103
Silicon Triple Diffused - Hitachi Semiconductor 2SB1104
Silicon PNP Triple Diffused(???????NP????? - Inchange Semiconductor Company Limited 2SB1105
Silicon Power Transistors - Inchange Semiconductor Company Limited 2SB1106
Silicon Power Transistors - Panasonic Semiconductor 2SB1108
Medium Speed Switching Complementary Pair with 2SD1608 - Hitachi Semiconductor 2SB1109
SILICON EPITAXIAL FREQUENCY HIGH VOLTAGE AMPLIFIER) - 2SB1109B
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1109C
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1109D
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 - Hitachi Semiconductor 2SB1110
SILICON EPITAXIAL FREQUENCY HIGH VOLTAGE AMPLIFIER) - 2SB1110B
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1110C
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126