NE5532D SPC, SCHALTUNG, FUNKTION
NE5532D Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| Philips Semiconductors | Internally-compensated dual noise operational amplifier |
NE5532D PDF | Min.°C | Max°C |
- NEC[NEC] NE5500179A
SILICON POWER - NEC[NEC] NE5500179A-T1
SILICON POWER - NE5500479A
Discrete - NEC[NEC] NE5510179A
3.5V OPERATION SILICON POWER MOSFET TRANSMISSION AMPLIFIERS - NEC[NEC] NE5510179A-T1
3.5V OPERATION SILICON POWER MOSFET TRANSMISSION AMPLIFIERS - CEL[California Eastern Labs] NE5510279A
OPERATION SILICON POWER MOSFET GSM1800 TRANSMISSION AMPLIFIERS - CEL[California Eastern Labs] NE5510279A-T1
OPERATION SILICON POWER MOSFET GSM1800 TRANSMISSION AMPLIFIERS - NEC[NEC] NE5511279A
NECS BAND POWER SILICON LD-MOS - NEC[NEC] NE5511279A-T1
NECS BAND POWER SILICON LD-MOS - CEL[California Eastern Labs] NE5511279A-T1-A
BAND POWER SILICON LD-MOS - NEC[NEC] NE5511279A-T1A
NECS BAND POWER SILICON LD-MOS - CEL[California Eastern Labs] NE5511279A-T1A-A
BAND POWER SILICON LD-MOS - PHILIPS[Philips Semiconductors] NE5512
Dual high-performance operational amplifier - PHILIPS[Philips Semiconductors] NE5512D
Dual high-performance operational amplifier - Philips Semiconductors NE5512N
Dual high-performance operational amplifier