2SC332806 SPC, SCHALTUNG, FUNKTION
2SC332806 Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| Toshiba Semiconductor | EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) |
2SC332806 PDF | Min.°C | Max°C |
- 2SC332
- Fuji Electric 2SC3320
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING - 2SC3320-T3P-F-T
HIGH VOLTAGE HIGH SPEED SWITCHING - 2SC3320L-T3P-F-T
HIGH VOLTAGE HIGH SPEED SWITCHING - ETC[ETC] 2SC3321
High speed switching transistor - Hitachi Semiconductor 2SC3322
Silicon Triple Diffused - Toshiba Semiconductor 2SC3324
EPITAXIAL TYPE (AUDIO FREQUENCY NOISE AMPLIFIER APPLICATIONS) - Toshiba Semiconductor 2SC332407
Silicon Epitaxial Type process) Audio Frequency Noise Amplifier Applications - 2SC3324BL
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SC-59 - 2SC3324GR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SC-59 - Toshiba Semiconductor 2SC3324_07
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications - Guangdong 2SC3325
Silicon Epitaxial - Toshiba Semiconductor 2SC332507
Silicon Epitaxial Type process) Audio Frequency Power Amplifier Applications - Toshiba Semiconductor 2SC3325_07
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications - Toshiba Semiconductor 2SC3326
EPITAXIAL TYPE MUTING SWITCHING APPLICATIONS)