2SB1432 SPC, SCHALTUNG, FUNKTION
2SB1432 Datasheet PDF
| Hersteller | Verpackung | Beschreibung | Temperatur | |
|---|---|---|---|---|
| NEC | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING | Min.°C | Max°C |
- Hitachi Semiconductor 2SB1000
- Hitachi Semiconductor 2SB1000A
FREQUENCY POWER AMPLIFIER Complementary pair 1366A - Hitachi Semiconductor 2SB1001
Silicon Epitaxial - 2SB1001BH
BJT - 2SB1001BJ
BJT - Renesas Technology Corp 2SB1001BJTR-E
Silicon Epitaxial - Hitachi Semiconductor 2SB1002
Silicon Epitaxial - 2SB1002CH
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 - 2SB1002CJ
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 - Renesas 2SB1002CJTL-E
Silicon Epitaxial - Inchange Semiconductor Company Limited 2SB1005
Silicon PNP Power Transistors - 2SB1007
Epitaxial Planar Silicon Transistor - 2SB1008
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126 - 2SB1009
Epitaxial Planar Silicon Transistor - ROHM 2SB1010
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE